7N60B DATASHEET PDF

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Low gate charge typical 38 nC? Low Crss typical 23 pF?

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Sss7n60b (7n60b) Mosfet

Dt Sheet. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Repetitive Rating : Pulse width limited by maximum junction temperature 2. Essentially independent of operating temperature 6. On-Region Characteristics Figure 2. Capacitance Characteristics Figure 6.

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7N60 - 7A mps,600 Volts N-CHANNEL MOSFET

General Description. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Absolute Maximum Ratings. SSS Series. V DSS.

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